We have examined the damage produced by Si-ion implantation into strained Si\u2081\u208b\u2093Ge\u2093 epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channelling techniques to determine the amorphization threshold in strained Si\u2081\u208b\u2093Ge\u2093, (x = 0.16 and 0.29) over the temperature range 30-110\ub0C. The results are compared with previously reported measurements on unstrained Si\u2081\u208b\u2093Ge\u2093, and with the simple model used to describe those results. We report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer.
展开▼
